Blog dell'azienda Applications for 800V High-Voltage Platforms and On-Board Chargers (OBCs): Mingjiada Electronics supplies large quantities of SCT020HU Automotive-Grade SiC MOSFETs

As a specialist supplier of electronic components, Shenzhen Mingjiada Electronics Co., Ltd. offers a large stock of SCT020HU (SCT020HU120G3AG), STMicroelectronics’ third-generation automotive-grade silicon carbide (SiC) power MOSFETs, in an HU3PAK package. It is suitable for high-reliability power applications such as main inverters in new energy vehicles, on-board chargers (OBCs), and DC/DC power supplies for EVs and HEVs. These are genuine, original products available for bulk supply, with samples also available.

SCT020HU Product Description

The SCT020HU is STMicroelectronics’ third-generation silicon carbide (SiC) N-channel power MOSFET, meeting the AEC-Q101 automotive grade standard. It features an HU3PAK package, a 1200V rating and a continuous drain current of 100A. Leveraging third-generation SiC process technology, the device maintains extremely low on-resistance across the entire temperature range. It features low gate charge, low parasitic capacitance and high-speed switching characteristics. With a built-in robust and fast intrinsic diode and a source detection pin, it enhances the conversion efficiency of power circuits whilst reducing the overall size and weight of the power supply unit, making it the preferred choice for high-voltage power conversion in new energy vehicles. Shenzhen Mingjiada Electronics Co., Ltd. maintains a long-term stock of the SCT020HU, offering genuine, in-stock products to meet the needs of R&D prototyping and mass production procurement, whilst ensuring supply security for long-term projects.

Specifications

- Model: SCT020HU (SCT020HU120G3AG)

- Brand: STMicroelectronics

- Device Type: N-channel SiC MOSFET (silicon carbide power transistor)

- Package: HU3PAK

- Drain-source voltage Vdss: 1200V

- Continuous drain current Id (Tc): 100A

- Typical on-resistance Rds (on): 18.5mΩ, maximum 28mΩ @ 50A, Vgs=18V

- Maximum gate charge Qg: 121nC @ 18V

- Maximum input capacitance Ciss: 3,465 pF @ 800 V

- Gate voltage Vgs: Maximum +18 V, -5 V

- Maximum power dissipation Ptot: 281 W

- Operating junction temperature range: -55 °C to +175 °C

- Certification standards: AEC-Q101 automotive grade certification, RoHS

- Process: Third-generation SiC MOSFET

Product Features

1. AEC-Q101 automotive-grade certification, suitable for the harsh high and low temperatures and vibration conditions encountered in automotive applications

2. Maintains extremely low Rds(on) across the entire temperature range, reducing conduction losses and improving system energy efficiency

3. High-speed switching performance and low parasitic capacitance support high-frequency power conversion, reducing the size of the heat sink

4. Integrated, stable ultra-fast body diode with excellent reverse characteristics

5. Source detection pin design optimises drive sampling, further enhancing power conversion efficiency

6. HU3PAK package with superior thermal performance, suitable for high-power, high-density power modules

7. Third-generation silicon carbide process ensures high reliability, suitable for long-life automotive applications

Application Scenarios

- Main traction inverters for new energy vehicles (EV/HEV)

- On-board chargers (OBC)

- High-voltage DC/DC converters for electric vehicles

- High-voltage power units for energy storage converters

- Industrial high-voltage power supplies and high-power charging station power modules

Mingjiada Electronics Supply Services

Established in 1996, Shenzhen Mingjiada Electronics Co., Ltd. holds ISO 9001 international quality management system certification and specialises in the supply of components for the 5G, new energy, Internet of Things (IoT) and Internet of Vehicles (IoV) sectors.

For the SCT020HU series, Mingjiada Electronics provides the following supply guarantees:

1. Stock availability: We adopt a stock-on-hand strategy, supporting sample requests and bulk procurement to meet requirements at every stage, from R&D testing to mass production ramp-up.

2. Genuine Products: We guarantee 100% genuine products and provide comprehensive datasheets and technical support.

3. One-Stop Order Fulfilment: In addition to SiC discrete devices, we offer complementary services for automotive-grade MCUs, driver ICs and peripheral components, thereby reducing the complexity of our customers’ supply chains.

Please contact Mingjiada Electronics for the latest quotations and stock information:

Website: www.hkmjd.com

Telephone: +86 13410018555

Email: sales@hkmjd.com

Address: Rooms 1239–1241, Guoli Building, Zhenzhong Road, Futian District, Shenzhen

Tags: SCT020HU120G3AG, SCT020HU120G3A, SCT020HU120G3, SCT020HU120G, SCT020HU120, SCT020HU12, SCT020HU1, SCT020HU