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Dettagli:
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| Numero di parte: | IXTH200N10T | Tipo FET: | N-channel |
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| Dallo scarico alla tensione di origine (Vdss): | 100 V | Corrente - Scarico continuo (Id) a 25°C: | 200A (Tc) |
| Capacitanza di ingresso (Ciss) (Max) @ Vds: | 9400 pF a 25 V | Dissipazione di potenza (max): | 550 W (Tc) |
| Evidenziare: | 100V Power MOSFET,200A N-Channel MOSFET,TO-247-3 Trench Gate MOSFET |
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IXTH200N10T Integrated Circuit Chip 100V 200A N-Channel Trench Gate Power MOSFETs TO-247-3 Product Overview Of IXTH200 The IXTH200N10T is a 100V, 200A N-Channel Enhancement Mode Trench Gate Power MOSFET housed in a TO-247-3 package. It belongs to a series of high-current, low-on-resistance trench-gate power MOSFETs designed for demanding power switching applications, including switch-mode power supplies, motor drives, inverters, DC-DC converters, and welding machines.
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