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Dettagli:
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| Numero di parte: | IXFH80N65X2W | Dallo scarico alla tensione di origine (Vdss): | 650 v |
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| Corrente - Scarico continuo (Id) a 25°C: | 80A (TC) | Tensione di comando (Rds max attivato, Rds min attivato): | 10v |
| Rds On (Max) @ Id, Vgs: | 38 mOhm a 40 A, 10 V | Vgs(th) (Max) @ Id: | 5V @ 4mA |
| Evidenziare: | 650V MOSFET Transistor,80A Power MOSFET,38mOhm N-Channel MOSFET |
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IXFH80N65X2W Integrated Circuit Chip X2 Series 80A 650V MOSFET Transistors TO247-3 Product Overview Of IXFH80N65X2W The IXFH80N65X2W is an X2-Class HiPerFET power MOSFET rated at 650 V breakdown voltage with 80 A continuous drain current and 38 mΩ on-resistance. It is an avalanche-rated, N-channel enhancement-mode device featuring a fast intrinsic body diode, low gate charge, and low package inductance for high power density designs. This part targets switch-mode and resonant
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