STW40N95K5 Chip di circuito integrato 950V MDmeshTM K5 Transistor MOSFET di potenza N-Channel

Chip del circuito integrato
March 19, 2025
Connessione Categoria: Chip del circuito integrato
Brief: Discover the STW40N95K5 Integrated Circuit Chip, a 950V MDmesh™ K5 N-Channel Power MOSFET Transistor designed for high efficiency and superior power density. Featuring ultra-low gate charge and industry-leading RDS(on), this MOSFET is ideal for demanding switching applications.
Related Product Features:
  • 950V Drain-Source Breakdown Voltage for high-power applications.
  • 38A Continuous Drain Current ensures robust performance.
  • Ultra-low 110 mOhms Drain-Source Resistance for minimal power loss.
  • MDmesh™ K5 technology enhances power density and efficiency.
  • Zener-protected and 100% avalanche tested for reliability.
  • Wide operating temperature range from -55°C to +150°C.
  • 93 nC Gate Charge for fast switching performance.
  • TO-247-3 package for easy through-hole mounting.
FAQ:
  • What is the maximum operating voltage of the STW40N95K5 MOSFET?
    The STW40N95K5 has a maximum Drain-Source Breakdown Voltage of 950V, making it suitable for high-voltage applications.
  • Is the STW40N95K5 suitable for high-efficiency applications?
    Yes, the STW40N95K5 features ultra-low gate charge and industry-leading RDS(on), ensuring high efficiency and superior power density.
  • What package type does the STW40N95K5 come in?
    The STW40N95K5 is available in a TO-247-3 package, designed for through-hole mounting.